self-assembly of densely packed zno nanorods grown chemically on porous silicon substrate
نویسندگان
چکیده
self-assembly of densely packed zno nanorods were grown on porous silicon (ps) substrate by low-temperature chemical bath deposition. the structural and optical properties of the obtained zno nanostructures on ps substrate were systematically studied. the strong and sharp (002) peak compared with other peaks in the x-ray diffraction (xrd) indicated thatzno nanorods formed with superior orientation toward the (002) plan.in addition, the small crystallite size and low compressive strain revealed that the self-assembly of densely packed zno nanorods had good crystallinity. field-emission scanning electron microscopy (fesem) indicated that the self-assembly of densely packed zno nanorods occurred on the surface, inside the pores and on the pore walls of the ps substrate. fesem images indicated that the average diameter and length of the zno nanorods were 150 and 500 nm, respectively. photoluminescence spectra (pl) exhibited a strong, sharp uv emission peak at 369 nm.
منابع مشابه
Self-Assembly of Densely Packed ZnO Nanorods Grown Chemically on Porous Silicon Substrate
Self-assembly of densely packed ZnO nanorods were grown on Porous Silicon (PS) substrate by low-temperature chemical bath deposition. The structural and optical properties of the obtained ZnO nanostructure...
متن کاملOrientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates.
ZnO nanowires have been synthesized on porous silicon substrates with different porosities via the vapour-liquid-solid method. The texture coefficient analysed from the XRD spectra indicates that the nanowires are more highly orientated on the appropriate porosity of porous silicon substrate than on the smooth surface of silicon. The Raman spectrum reveals the high quality of the ZnO nanowires....
متن کاملStructural and optical characterization of GaN grown on porous silicon substrate by MOVPE
GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...
متن کاملIn situ antimony doping of solution-grown ZnO nanorods.
ZnO nanorods are doped with Sb during the aqueous chemical synthesis by addition of Sb acetate dissolved in ethylene glycol.
متن کاملSelf - Assembly of Gold Nanorods
Self-assembly of gold nanorods (NRs) with aspect ratio of ∼4.6 (12 nm in diameter and 50-60 nm in length) has been studied using transmission electron microscopy (TEM). Under appropriate conditions such as nanoparticle concentration, solvent evaporation, narrow size distribution, ionic strength, and surfactant concentration of the parent solution, gold nanorods assemble into one-, two-, and thr...
متن کاملIron (III) Ion Sensor Based on the Seedless Grown ZnO Nanorods in 3 Dimensions Using Nickel Foam Substrate
In the present work, the seedless, highly aligned and vertical ZnO nanorods in 3 dimensions (3D) were grown on the nickel foam substrate. The seedless grown ZnO nanorods were characterised by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD) techniques. The characterised seedless ZnO nanorods in 3D on nicke...
متن کاملمنابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
iranian journal of chemistry and chemical engineering (ijcce)ناشر: iranian institute of research and development in chemical industries (irdci)-acecr
ISSN 1021-9986
دوره 35
شماره 1 2016
میزبانی شده توسط پلتفرم ابری doprax.com
copyright © 2015-2023